Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A

Rds On (Max) @ Id, Vgs

14.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1165pF @ 10V

Power - Max

2.7W

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN-Dual (3.3x3.3)

Package / Case

8-PowerVDFN