Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta), 20A (Tc)

Rds On (Max) @ Id, Vgs

99.9mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

30 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1380 pF @ 50 V

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-VQFN Exposed Pad