Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.4A, 9.7A

Rds On (Max) @ Id, Vgs

22.6mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id

2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 15V

Power - Max

1.4W, 2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)