Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta), 14.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id

5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

13 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

515 pF @ 25 V

Power Dissipation (Max)

2.4W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET SB

Package / Case

DirectFET™ Isometric SB