Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

5.7A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

4.9V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

890 pF @ 25 V

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ SJ

Package / Case

DirectFET™ Isometric SJ