Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 20V

Current - Continuous Drain (Id) @ 25°C

100mA, 200mA

Rds On (Max) @ Id, Vgs

8Ohm @ 10mA, 4V

Gate Charge (Qg) (Max) @ Vgs

0.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 5V

Power - Max

150mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT6

Package / Case

SOT-563, SOT-666