Category

Other Products

Manufacturer

Harris Corporation

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Rds On (Max) @ Id, Vgs

85mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 25 V

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3