Category

Other Products

Manufacturer

Nexperia

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50 V

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35 nC @ 5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

36 pF @ 25 V

Power Dissipation (Max)

350mW (Ta), 1.14W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3