Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

50mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V

Rds On (Max) @ Id, Vgs

40Ohm @ 10mA, 2.5V

Vgs (Max)

10V

Input Capacitance (Ciss) (Max) @ Vds

5.5 pF @ 3 V

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70

Package / Case

SC-70, SOT-323