Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

125mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.8 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 10 V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT5

Package / Case

SOT-23-5 Thin, TSOT-23-5