Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

300A (Tc)

Vgs(th) (Max) @ Id

5.6V @ 80mA

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

15000 pF @ 10 V

Power Dissipation (Max)

1360W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Module

Package / Case

Module