Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

470mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

40 pF @ 10 V

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VML1006

Package / Case

SC-101, SOT-883