Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A

Rds On (Max) @ Id, Vgs

18.5mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)