Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 20V

Current - Continuous Drain (Id) @ 25°C

1.5A

Rds On (Max) @ Id, Vgs

230mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 10V

Power - Max

1.25W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6