Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate, 0.9V Drive

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

200mA

Rds On (Max) @ Id, Vgs

2.2Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

800mV @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

26pF @ 10V

Power - Max

120mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT6

Package / Case

SOT-563, SOT-666