Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

Silicon Carbide (SiC)

Configuration

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Vgs(th) (Max) @ Id

2.7V @ 22mA

Input Capacitance (Ciss) (Max) @ Vds

14000pF @ 10V

Power - Max

780W

Operating Temperature

-40°C ~ 150°C (TJ)

Supplier Device Package

Module

Package / Case

Module