Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12 V

Current - Continuous Drain (Id) @ 25°C

9.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

16mOhm @ 8.2A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42.6 nC @ 5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2953 pF @ 4 V

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type E)

Package / Case

6-PowerUDFN