Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

630mA

Rds On (Max) @ Id, Vgs

1.8Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

12.9pF @ 12V

Power - Max

820mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6