Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

632 pF @ 10 V

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type B)

Package / Case

6-UDFN Exposed Pad