Category

Other Products

Manufacturer

onsemi

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

510mA, 340mA

Rds On (Max) @ Id, Vgs

2Ohm @ 510mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 25V, 66pF @ 25V

Power - Max

700mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6