Category

Other Products

Manufacturer

Texas Instruments

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Rds On (Max) @ Id, Vgs

30mOhm @ 4A, 8V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.7 nC @ 4.5 V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

340 pF @ 15 V

Power Dissipation (Max)

2.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WSON (2x2)

Package / Case

6-WDFN Exposed Pad