Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

39mOhm @ 27A, 18V

Vgs(th) (Max) @ Id

5.6V @ 13.3mA

Gate Charge (Qg) (Max) @ Vgs

104 nC @ 18 V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1526 pF @ 500 V

Power Dissipation (Max)

262W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3