Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.4A, 2.8A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 15V

Power - Max

840mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6