Category

Other Products

Manufacturer

Texas Instruments

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A

Rds On (Max) @ Id, Vgs

27mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

469pF @ 10V

Power - Max

2.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WSON (2x2)

Package / Case

6-WDFN Exposed Pad