Category

Other Products

Manufacturer

Nexperia

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

350mA, 200mA

Rds On (Max) @ Id, Vgs

1.4Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 15V

Power - Max

445mW

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

6-TSSOP

Package / Case

6-TSSOP, SC-88, SOT-363