Category

Other Products

Manufacturer

Texas Instruments

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

76mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id

1.05V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.33 nC @ 4.5 V

Vgs (Max)

-20V

Input Capacitance (Ciss) (Max) @ Vds

385 pF @ 10 V

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-LGA (0.73x0.64)

Package / Case

3-XFLGA