Category

Other Products

Manufacturer

Infineon Technologies

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 120µA

Gate Charge (Qg) (Max) @ Vgs

92 nC @ 10 V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5430 pF @ 25 V

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB