Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

19A, 41A

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 12V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TISON-8

Package / Case

8-PowerTDFN