Category

Other Products

Manufacturer

International Rectifier

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

209A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.25mOhm @ 123A, 10V

Vgs(th) (Max) @ Id

2.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

111 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6904 pF @ 25 V

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DirectFET™ Isometric ME

Package / Case

DirectFET™ Isometric ME