Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A

Rds On (Max) @ Id, Vgs

230mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

497pF @ 50V, 717pF @ 50V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)