Category

Other Products

Manufacturer

International Rectifier

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

50 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2060 pF @ 25 V

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MN

Package / Case

DirectFET™ Isometric MN