Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

950mA, 530mA

Rds On (Max) @ Id, Vgs

350mOhm @ 950mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 1.6µA

Gate Charge (Qg) (Max) @ Vgs

0.34nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

47pF @ 10V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT363-6-1

Package / Case

6-VSSOP, SC-88, SOT-363