Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel Complementary

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A, 1.5A

Rds On (Max) @ Id, Vgs

160mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

282pF @ 15V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

PG-TSOP6-6

Package / Case

SOT-23-6 Thin, TSOT-23-6