Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs

2.9 nC @ 5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

44 pF @ 25 V

FET Feature

Depletion Mode

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT23

Package / Case

TO-236-3, SC-59, SOT-23-3