Category

Other Products

Manufacturer

Infineon Technologies

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 39.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.1V @ 48µA

Gate Charge (Qg) (Max) @ Vgs

30 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2220 pF @ 15 V

Power Dissipation (Max)

2.1W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN