Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500 V

Current - Continuous Drain (Id) @ 25°C

2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

3Ohm @ 400mA, 13V

Vgs(th) (Max) @ Id

3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

4.3 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

84 pF @ 100 V

Power Dissipation (Max)

5W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-3

Package / Case

TO-261-4, TO-261AA