Category

Other Products

Manufacturer

Infineon Technologies

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

8.8 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

210 pF @ 15 V

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(TSOP-6)

Package / Case

SOT-23-6