Category

Other Products

Manufacturer

Infineon Technologies

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

25.4A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.1V @ 345µA

Gate Charge (Qg) (Max) @ Vgs

186 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

14000 pF @ 15 V

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN