Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 6.7A, 10V

Vgs(th) (Max) @ Id

2.3V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

5.6 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440 pF @ 50 V

Power Dissipation (Max)

11.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-PQFN (2x2) (DFN2020)

Package / Case

6-PowerVDFN