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IPD5N25S3430ATMA1
Part Number:
IPD5N25S3430ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 250V 5A TO252-3
Series:
OptiMOS™
Package:
Tape & Reel (TR)
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Downloads:
Datasheet IPD5N25S3430ATMA1
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
422 pF @ 25 V
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
IN STOCK
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Manufacturer's standard packaging