Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V, 50V

Current - Continuous Drain (Id) @ 25°C

115mA, 130mA

Rds On (Max) @ Id, Vgs

7.5Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V, 45pF @ 25V

Power - Max

200mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363