Category

Other Products

Manufacturer

Nexperia

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 10 V

Power Dissipation (Max)

510mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3